SK hynix has introduced their newest technology of 3D NAND, now that includes 176 layers of cost entice flash reminiscence cells. SK hynix is the second NAND producer to achieve this layer rely, following Micron’s announcement that their 176L NAND was beginning to ship in Essential-branded merchandise.
That is SK hynix’s third technology to characteristic their Periphery below Cell (PUC) design to scale back die measurement by inserting peripheral logic below the reminiscence cell array, much like Intel and Micron’s CMOS Beneath Array design. (SK hynix refers back to the mixture of this die format and their cost entice flash cells as “4D NAND”.) Modifications with this technology embrace a 35% enhance in bit productiveness (solely barely lower than theoretically attainable with the leap from 128 to 176 layers) and a 20% enhance in cell learn velocity. The utmost IO velocity between NAND dies and the SSD controller has been elevated from 1.2GT/s for his or her 128L NAND to 1.6GT/s for the 176L NAND.
SK hynix has began sampling a 512Gbit TLC half to SSD controller corporations for creating appropriate firmware. SK hynix plans to initially use their 176L NAND for cellular merchandise (ie. UFS modules) which can supply 70% quicker learn speeds and 35% quicker write speeds, on account of be launched across the center of subsequent 12 months. The cellular merchandise will then be adopted up by shopper and enterprise SSDs. SK hynix additionally plans to introduce 1Tbit dies based mostly on their 176L course of.
Primarily based on this announcement, it seems that SK hynix will probably be pretty aggressive in the course of the upcoming technology of 3D NAND. They might be operating a bit behind Micron’s schedule, however Micron has been pursuing an unusually fast transition to 176L after utilizing their 128L technology as a low-volume check automobile to work out any points ensuing from their swap from floating gate to cost entice cell design. In the meantime, Intel’s 144L NAND ought to be arriving early subsequent 12 months, and Kioxia/Western Digital 112L NAND is because of present up any day now. Samsung’s 128L NAND began delivery just a few months in the past within the 980 PRO. Wile they haven’t formally introduced specs for his or her subsequent technology, it’s anticipated to enter manufacturing subsequent spring with a layer rely within the neighborhood of 176L, and to be Samsung’s first technology to make use of string stacking—a method their rivals all needed to undertake whereas layer counts had been within the 64-96L vary.